http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08165197-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S117-902 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S117-917 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B19-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-28 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01P1-23 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01P1-215 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F10-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01P1-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01P3-00 |
| filingDate | 1994-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a20e3f374ccb72edf78743eb7e1b1811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f5c83b4320646b26c3de2261dc9d89b |
| publicationDate | 1996-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08165197-A |
| titleOfInvention | Method for manufacturing garnet magnetic oxide single crystal and magnetostatic wave device |
| abstract | (57) [Summary] (Modified) [Purpose] In the garnet magnetic oxide single crystal and magnetostatic wave device using the same, the temperature (vertex temperature) at the apex of the vertical resonance magnetic field is from -100 ℃ to 200 ℃. It is intended to be the desired value of the range. [Structure] Film composition epitaxially grown in the <111> direction of a substrate single crystal having a lattice constant of 12.363 to 12.386Å (Bi x Y 3-x ) (Fe 5-y M y ) O 12 (where M is one or more elements selected from Ga and Al, x is 0.002 ≦ x ≦ 0.4, y Is 0.6 ≦ y ≦ 0.8) is indicated by <111> direction of the growth-induced anisotropy constant Ku g of the garnet magnetic single crystal 0.3 × 10 In 3 ≦ Ku g ≦ 1.5 × 10 3 garnet magnetic oxide single crystal is a (Joules / m 3), the length of the shorter side in the film thickness h is substantially rectangular or substantially elliptical sample of the epitaxial film The value of h / L is 0.001 A method of manufacturing a garnet magnetic oxide single crystal and a magnetostatic wave device, characterized in that the range is ≦ h / L ≦ 0.25. |
| priorityDate | 1994-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419527388 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID518696 |
Total number of triples: 25.