| abstract |
(57) [Summary] [Object] To provide a method for selectively etching a barrier type anodic oxide formed on the surface of aluminum by anodizing the aluminum. [Structure] Halogen fluoride (eg, ClF 3 , Cl Gas etching of the anodic oxide is carried out by exposing the anodic oxide to an atmosphere containing F, BrF 3 , BrF). The etching ends when the aluminum surface is exposed, and a thin aluminum fluoride layer is formed on the aluminum surface, which can be removed by washing with water. By the above method, a metallic aluminum surface can be obtained without overetching. |