| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f187eb8cb31e70d4acd428dd8beedd4f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7815
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05624
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-975
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-02166
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01015
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01014 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2884 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate |
1994-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_522e6a75996f0dd5efa50bbab6d7f0c7 |
| publicationDate |
1996-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H08139323-A |
| titleOfInvention |
Insulated gate type semiconductor device |
| abstract |
(57) [Abstract] [Purpose] A position recognition pattern for recognizing the position of a semiconductor device can be formed without increasing the chip size of the semiconductor device, and an insulation for forming an inspection region for withstand voltage inspection. An object is to provide a gate type semiconductor device. A protection element for the gate of an insulated gate field effect transistor is formed separately from the gate, so that a contact is made with the protection element to electrically connect the gate and the protection element. A region is formed. A position recognition pattern for recognizing the position of the semiconductor device is formed on the metal wiring pattern formed on the contact region. In addition, an inspection region for a withstand voltage inspection is also formed by using the metal wiring pattern. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014505360-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016152299-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007305763-A |
| priorityDate |
1994-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |