http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08138867-A

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filingDate 1994-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58a63c9dbdbf7320ec99c9d8f1e3c3fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_848cc15f6d0463f979249efa93c0e7fc
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publicationDate 1996-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H08138867-A
titleOfInvention Electroluminescence element and method for manufacturing electroluminescence element
abstract (57) [Abstract] [Objective] By adding an element that is easily added to the light emitting layer and is in the same group as the constituent material of the base material of the light emitting layer, the electron concentration in the light emitting layer is increased and the emission brightness of the EL device is improved. To improve. [Structure] A second group II element having an ionic radius different from that of the group II element of the host material is added to the light emitting layer 14 of the EL device 100 in which the group II-VI compound is used as the host material and the emission center element is added. Ratio of the added amount, (added amount of the emission center element in the light emitting layer) / (Addition amount of group II elements having different ionic radii added to the light emitting layer) is 0.05 or more and 40 or less. Therefore, when an electric field is applied to the light emitting layer 14, electrons are emitted from the isoelectron trap to the conduction band, so that the electron concentration in the light emitting layer 14 is significantly increased. Then, the excitation efficiency of the emission center by the accelerated electrons is improved, so that the emission brightness and emission efficiency of the EL element can be significantly improved.
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type http://data.epo.org/linked-data/def/patent/Publication

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