http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08130347-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_baa7ce63bc8402ff8f981dc330851611 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a14ae34bb1c9f495e8f86d45aae40bc7 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 1994-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f372da8e0153dd498727324faad69af http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ebb374265ad754498f4ca1a928c137d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddaa1b3f3f9d7a8294562ed2b06e53ec http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f498b7504a83e6d93ef6fd74d04a2ad2 |
| publicationDate | 1996-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08130347-A |
| titleOfInvention | Semiconductor light emitting device and manufacturing method thereof |
| abstract | (57) [Summary] [Object] To provide a semiconductor light-emitting device such as a high-quality light-emitting diode or a semiconductor laser capable of emitting and oscillating particularly in a wavelength range from blue to ultraviolet, and a manufacturing method thereof. [Structure] GaP or GaAs is used for the substrate, and Cu (Al a Ga 1-a ) (S b Se 1-b ) (S b Se 1-b ) having a low resistance in the p-type semiconductor layer or the n-type semiconductor layer of the pn junction capable of current injection emission ) 2 (0 ≦ a ≦ 1, 0 ≦ b ≦ 1) is used, and the band gap of the n-type semiconductor layer or the p-type semiconductor layer is larger than that (Mg c Zn 1-c ) (Al d Ga 1-d) 2 (S e Se 1-e) 4 (0 ≦ c ≦ 1,0 ≦ d ≦ 1,0 ≦ e <1) is used, The semiconductor light-emitting device characterized by the above-mentioned. The vapor phase epitaxial growth of a p-type semiconductor layer or an n-type semiconductor layer on a GaP substrate or an n-type semiconductor layer or a p-type semiconductor layer on a GaAs substrate is sequentially performed by using an organometallic compound as a raw material of each semiconductor layer. A method for manufacturing a semiconductor light emitting device characterized by the above. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6956241-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7768031-B2 |
| priorityDate | 1994-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 59.