| abstract |
(57) [Abstract] [Purpose] In a semiconductor device (in particular, a circuit formed on an insulating substrate), an interlayer short circuit caused by a pinhole in an interlayer insulating film is reduced. [Structure] A wiring whose main component is a metal such as aluminum, tantalum, or titanium that easily forms an anodic oxide is formed on an insulating surface, and the wiring is covered to form an interlayer insulator. After that, the substrate is dipped in an electrolytic solution such as ammonium tartrate, and the wiring is used as one of the electrodes to pass a current and gradually increase the potential difference from the opposite electrode, thereby selecting the exposed portion of the wiring due to the pinhole of the interlayer insulator. To form an anodic oxide to enhance the insulating property. |