| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2b31f8612f522a744762d83c23879ba |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4232 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7838 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08 |
| filingDate |
1994-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a72f66e0fc2a1453ecf744d7707c5cc4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a264d09ac7ee0646603849715a4a211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acb565f117f8e6773a7fd124f6e6240b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_112f32d684c523da26c2bc57213460dd |
| publicationDate |
1996-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H08130310-A |
| titleOfInvention |
MOS device and method of manufacturing the same |
| abstract |
(57) [Abstract] [Purpose] The short channel effect, the increase in the resistance of the source and drain, and the metal which are the problems that occur in the MOS device in which the channel length becomes shorter due to the higher integration degree of the integrated circuit. It is possible to prevent a decrease in reliability of the element due to a junction breakdown due to wiring and electromigration. [Structure] Another groove-shaped gate electrode 9 is formed between the gate electrode 4 and the source / drain 7 to secure a junction depth of the source and drain about the depth of the groove. [Effect] By implanting an impurity of a predetermined concentration under the gate electrode having the groove structure and adjusting the concentration of the impurity, it becomes possible to adjust the electrical characteristics such as the threshold voltage and the leakage current. Become. |
| priorityDate |
1994-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |