http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08124924-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1994-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82f769832548c8f131ecec6778885984 |
| publicationDate | 1996-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08124924-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Summary] [Purpose] O that has good film quality and does not generate voids. 3- Allows formation of TEOS oxide film. [Structure] An oxide film 2 is formed on a silicon substrate 1, and an Al wiring 3 is formed thereon [FIG. (A)]. Plasma CV The plasma oxide film 4 is formed by the D method [(b) figure]. Next, a doping gas containing a gas of an organic boron compound and / or an organic phosphorus compound is supplied to perform pre-purge [Fig. (C)]. After that, TEOS, O 3 is supplied to form the O 3 -TEOS oxide film 5 [FIG. (D)]. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001127054-A |
| priorityDate | 1994-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.