http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08124920-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b3763aa0cdd9f34607453119c627586a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
| filingDate | 1994-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94b6211ac59ffefeca8c4ac76f127afd |
| publicationDate | 1996-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08124920-A |
| titleOfInvention | Alumite film formation method |
| abstract | (57) [Summary] [Purpose] Even when exposed to plasma, the emission of impurities from the aluminum surface is suppressed, the adhesion of impurities to the wafer surface is prevented, and IC defects are prevented. [Structure] An organic solvent and pure water are used in place of the caustic soda during the degreasing process. |
| priorityDate | 1994-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.