http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08111458-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
filingDate 1994-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_baff81ccbaa0d5563a782961262da7d8
publicationDate 1996-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H08111458-A
titleOfInvention Semiconductor device and manufacturing method thereof
abstract (57) [Summary] [Objective] The main feature of the present invention is to obtain a method for forming a highly reliable interlayer insulating film having sufficient flatness and sufficient interlayer dielectric strength. [Structure] A metal wiring pattern 2 is formed on a semiconductor substrate 1. To cover the surface of the metal wiring pattern 2, First oxide film 3 is formed on semiconductor substrate 1. Si—O—Si bond and Si are formed on the semiconductor substrate 1 so as to cover the metal wiring pattern 2 covered with the first oxide film 3. A polymer film 4 containing a -H group and having a three-dimensional molecular structure is formed. The polymer film 4 is subjected to plasma treatment with an inert gas, whereby the inert gas is introduced into the polymer film 4. Second on the plasma-treated polymer film 4 Oxide film 6 is formed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7056825-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6255732-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6187662-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6479407-B2
priorityDate 1994-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261

Total number of triples: 19.