http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08107148-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 1995-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6e55422c136fd81822864a13a092a48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf99a298ac0c94b070086a813720612d
publicationDate 1996-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H08107148-A
titleOfInvention Wiring structure and method of forming wiring structure
abstract (57) Abstract: When connecting upper and lower layer wirings with plugs, to obtain good patterning accuracy of the lower layer wirings and contact resistance between the plugs and the lower layer wirings. A Ti thin film and a T film are formed on the surface of an Al alloy film. A conductive layer having a laminated structure of the iN thin film 7 is formed, the Al alloy film 5 and the conductive layer are patterned by a lithography technique, and a Si oxide film 8 is deposited on the Al alloy film 5 and the conductive layer. 8, a contact hole 9 communicating with the conductive layer is formed, after the contact hole 9 is formed, the TiN thin film 7 exposed at the bottom of the contact hole 9 is removed by etching, and a tungsten plug 10 is buried in the contact hole 9 by a selective CVD method. An Al alloy film 12 is formed so as to be electrically connected to the tungsten plug 10.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8436252-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2011002022-A1
priorityDate 1994-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 26.