| abstract |
(57) [Summary] [Purpose] The objective is to further increase the stress resistance of the resin mold and the ultraviolet irradiation efficiency. [Structure] On a semiconductor substrate 1 on which an oxide film 2, an aluminum wiring 3, an aluminum bonding pad 3a, a silicon nitride film 4, a transistor 6 and the like are formed in advance, a silicone having a hydrogen atom at a terminal and a methyl group at a side chain. A resin film 5 made of a ladder resin is formed. |