http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0794445-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1993-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6badc6368f3694af21d4d615da4ce1b1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab01889847da875fd6d6068179fdef4a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d01a3ca0889ca9bb32c48d748ed60a52 |
| publicationDate | 1995-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0794445-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Summary] [Object] It is an object of the present invention to provide a method of manufacturing a semiconductor device in which a metal thin film is formed on the entire surface or a desired area of a contact area or the like on a semiconductor substrate 1 with good film thickness controllability. To do. [Structure] In the present invention, p + formed on the silicon substrate 1 When contacting the diffusion layer 3, TiCl 4 is adsorbed on the surface of the substrate 1 to form a TiCl 4 film 8. After that, the TiCl 4 film 8 is subjected to fluorine plasma treatment so that the vapor pressure is higher than that of TiCl 4. It is modified to a low TiF x film 9a. Further, by heat treatment, the titanium silicide film 10 can be selectively formed on the surface of the p + diffusion layer 3. It is also possible to form a titanium silicide film on the entire surface by the same method. |
| priorityDate | 1993-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.