http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0794423-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-08
filingDate 1993-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_166d1e11006e710b945dfb642ed7ad40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cf55e3263f2e6d962e1fc5a3831ac4f
publicationDate 1995-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0794423-A
titleOfInvention Method for growing compound semiconductor crystal
abstract (57) [Summary] [Object] The present invention is a compound capable of always obtaining a flat and high-quality interface stably by preventing the surface of a substrate from being roughened by heat cleaning and by preventing residual of oxygen and carbon. A method for growing a semiconductor crystal is provided. A method for growing a compound semiconductor crystal according to the present invention comprises a first step of growing a compound semiconductor crystal containing no aluminum on a compound semiconductor crystal substrate containing aluminum as a constituent element to form a thin layer of 50 nm or less. A second step of taking out and / or processing the crystal substrate having the thin layer formed into the atmosphere, and a third step of etching the thin layer while cleaning the surface of the crystal substrate by plasma cleaning. Is included at least.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012059866-A
priorityDate 1993-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 30.