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filingDate 1993-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f031aabbd3aff4d1a15b7b34b82ec161
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publicationDate 1995-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0792695-A
titleOfInvention Thin film pattern formation method
abstract (57) [Summary] (Modified) [Purpose] To provide a method for forming a thin film pattern with excellent pattern accuracy at low cost. [Constitution] a) Formula provided on the substrate 101 (Wherein R 1 , R 2 , R 3 and R 4 are independently selected from the group consisting of a substituted or unsubstituted aliphatic hydrocarbon residue, an alicyclic hydrocarbon residue and an aromatic hydrocarbon residue. And m and n are integers), a step of selectively exposing the polysilane layer 102 made of polysilane having a structure represented by the formula 110 to ultraviolet rays 110 to form a latent image of the thin film pattern, and b) the thin film pattern. The polysilane layer 1 on which the latent image of A method of forming a thin film pattern, which comprises a step of immersing No. 02 in a metal oxide sol and then drying.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002311592-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003162058-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9803044-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6699748-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004152884-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000129211-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004152883-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005134908-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014136892-A1
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