| abstract |
(57) [Summary] [Object] To provide a liquid crystal display device having a structure in which the film thickness of a gate insulating film of a coplanar type TFT and an inverted stagger type TFT can be optimized. A reverse stagger type TFT of a pixel section and a coplanar type TFT of a driving section are formed on the same insulating substrate 1, and a gate insulating film 3a of the coplanar type TFT and a lower insulating film 3b of the reverse stagger type TFT are formed. The gate electrode 4a of the coplanar type TFT and the inverted stagger type TF which are formed of the same first insulating film 3 The gate electrode 4b of T is formed of the same conductive film, and the interlayer insulating film 5a of the coplanar TFT and the inverted stagger type TFT are formed. The second gate insulating film 5b is formed of the same second gate insulating film 5. |