| abstract |
(57) [Abstract] [Purpose] To obtain high quality interfaces and high quality crystal layers on the surface of semiconductor substrates. [Structure] The semiconductor crystal growth method is the etching operation 2 1. After the introduction operation 22, the preheating operation 23, and the transfer operation 24, the GaAs substrate plasma cleaning operation 30 and the temperature raising operation 31 are performed, and then the buffer layer growth operation 32 is performed. |