http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0766035-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F41-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F1-0036
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y25-00
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22C38-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F10-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F41-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
filingDate 1993-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2378e5d18b21e8205f8fc46cdf3a8f0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e73c80e6af7c22be31fb3dc5c714e458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7aa3c6d2b6741f9e090aa70c4e6b67f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2f2c727907c2ff341874e784a0ba011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66286cb1b8e934fa4a1bc814e07b62fb
publicationDate 1995-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0766035-A
titleOfInvention Magnetic thin film
abstract (57) [Summary] [Object] To provide a magnetic thin film having a high saturation magnetic flux density, excellent corrosion resistance and thermal stability, and suitable for a core material of a magnetic head. [Structure] A magnetic thin film is formed on a substrate 4 by sputtering in a vacuum chamber 2 of a sputtering apparatus. As the target 1, a Co chip and at least one chip of a platinum group element are placed on a Fe target. Thus, a magnetic thin film made of an alloy in which 0.1 to 5 at% of at least one platinum group element is added to the Fe—Co alloy having a Co content of 20 to 60 at% is formed. Furthermore, O2, N2, or CH4 gas may be introduced into the chamber 2 together with Ar gas to add at least one of N, C, and O to the thin film, or B may be dissolved in the Fe target to add B to the thin film. You may add. Furthermore, Ti, Zr, Hf, V, N You may add at least 1 sort (s) of b, Ta, Cr, Mo, and W.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7095586-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008127588-A
priorityDate 1993-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419583196
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID104727
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23939
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458431511

Total number of triples: 28.