http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0758011-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 |
| filingDate | 1993-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccfdb27cecf5b53bdf0221f5d1797bc9 |
| publicationDate | 1995-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0758011-A |
| titleOfInvention | Method for epitaxial growth of III-V compound semiconductor |
| abstract | (57) [Summary] [Objective] In an epitaxial growth method for a III-V group compound semiconductor, without using an ozone depleting substance, A high-concentration carbon-doped p-type layer is grown with good controllability in a wide doping concentration range with a smaller amount of the dopant gas than in the past, without thermal decomposition of the dopant gas. [Structure] As a carbon dopant gas, a raw material having a structure in which an atomic group containing a carbon atom and an atomic group which is not decomposed on a substrate are bonded, such as dimethylgallium chloride (DMGaCl), is used. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6242327-B1 |
| priorityDate | 1993-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.