http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0745554-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-511 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate | 1993-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73817f5e6fdb2f2734af53626c6341fc |
| publicationDate | 1995-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0745554-A |
| titleOfInvention | Wiring formation method |
| abstract | (57) [Summary] [Purpose] To form a highly reliable ohmic contact in a fine contact hole. [Structure] After the natural oxide film 5 on the surface of the diffusion layer 2 exposed on the bottom surface of the contact hole 3 is reduced and removed by using a plasma of a halogen-based gas, the substrate is continuously subjected to CVD without exposing to the atmosphere, A CVD-TiN (200) film 6 is formed. As a result, the Si (100) surface and the TiN (20 The continuity of the crystal orientation with the (0) plane is enhanced and the ohmic property is improved. [Effect] Compared to the conventional reduction and removal of the natural oxide film by the plasma mainly containing H 2 , the diffusion layer 2 is less damaged. Throughput can be improved because the step of forming a Ti film for ensuring ohmic properties can be omitted, and even if the Ti film is formed, the film thickness can be small. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000353672-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100827483-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011139093-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4608530-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002134611-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008047929-A |
| priorityDate | 1993-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.