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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G19-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-12
filingDate 1994-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0614a02592d62c7ed2498191e3287ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4115ce055fcaa561459faeab8f3491c7
publicationDate 1995-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H07330336-A
titleOfInvention Method for forming tin (IV) oxide film
abstract (57) [Abstract] [Purpose] It is not necessary to form a buffer layer or the like or to use a single crystal substrate, the manufacturing process can be simplified, and a tin (IV) oxide film having a desired orientation can be easily formed. Provided is a method for forming a tin (IV) oxide film, which makes it possible to surely form a film under a wide range of film forming conditions. [Structure] The method for forming the tin (IV) oxide film is (C 4 H 9 ) An alcohol solution containing 2 Sn (OCOCH 3 ) 2 is sprayed on the heated substrate to form a highly oriented tin (IV) oxide film having a (200) plane orientation on the substrate. Alternatively, an alcohol solution containing (C 4 H 9 ) 4 Sn is sprayed onto the heated substrate to form a highly oriented tin (IV) oxide film having a (110) plane orientation on the substrate. To do.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012150904-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2004105055-A1
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