| abstract |
(57) [Summary] (Modified) [Structure] A gate insulating film and a gate electrode are provided on one side of an amorphous semiconductor film, and a source electrode and a drain electrode are separated on the other side of the amorphous semiconductor film. In the provided thin film transistor, a barrier layer made of a silicon nitride film having a thickness of 5 to 20Å was provided on the source electrode and drain electrode sides of the amorphous semiconductor film. [Effects] With the above structure, the MIS tunnel diode including the source and drain electrodes, the thin film insulating layer, and the amorphous semiconductor film is formed, and good contact can be obtained. Further, since the barrier layer made of a silicon nitride film is formed under the source electrode and the drain electrode, it is possible to prevent metal diffusion from the electrode to the semiconductor. |