http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07321346-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2dcebf5a7f7ddc3b081f70e8ce1c4097 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861 |
| filingDate | 1994-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_589103876fcf0a9865622305eaa5f41f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1bfa4cfdce97f092ae0696ae4ce953ac |
| publicationDate | 1995-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07321346-A |
| titleOfInvention | Diamond semiconductor device |
| abstract | (57) [Abstract] [Purpose] In a diamond semiconductor device having a semiconductor diamond layer, a high resistance diamond layer formed on the semiconductor diamond layer, and an electrode formed on the high resistance diamond layer, high temperature or Provided is a diamond semiconductor device having a good rectifying electrode and / or an ohmic electrode which does not deteriorate in characteristics even when the temperature is rapidly raised or lowered. A high resistance diamond layer 23, a B-doped diamond layer 24 and a high resistance diamond layer 25 are sequentially formed on a silicon nitride substrate 29, and a gate electrode 26 made of Ti and Ni are formed on the high resistance diamond layer 25. The source electrode 27 and the drain electrode 28 are formed. Then, heat treatment is performed to form a Ti carbide layer 26a at the interface between the gate electrode 26 and the high resistance diamond layer 25, and Ni is diffused from the source electrode 27 and the drain electrode 28 to form Ni diffusion regions 27a and 28a. Then, ohmic contact is obtained between the source electrode 27 and the drain electrode 28 and the B-doped diamond layer 24 through the Ni diffusion regions 27a and 28a. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007066976-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160055451-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006057246-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7768091-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004207272-A |
| priorityDate | 1994-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.