| abstract |
(57) [Summary] [Object] An object of the present invention is to provide an electronic element having a much higher withstand voltage than ever before and a method of manufacturing an electronic element capable of stably obtaining a high withstand voltage insulating film at a high yield. And An electronic device in which a conductive wiring pattern is formed on at least a surface of an insulating substrate, and an insulating layer is formed so as to cover a part or all of the substrate and the wiring pattern. In the above, the insulating layer has an oxygen content of at least 1 near the step portion of the pattern. It is characterized by being composed of a silicon nitride film of 0 atom% or less. Further, when the insulating layer is formed by a plasma CVD method at a film forming temperature T (° C.), an ion flux I (A), and a film forming rate v (nm / min), T ≧ −651. (I / v) +390, 150 ≦ T ≦ 350 (however, the ion flux indicates a current amount (A) per 60 × 60 cm 2 ), which is characterized in that the film is formed. |