http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07321055-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a0c60211f3b0453235b69355d077c9e0 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1994-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7f482090fdc67cc5ebcd21bb9ef3e39 |
| publicationDate | 1995-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07321055-A |
| titleOfInvention | Epitaxial growth apparatus and epitaxial growth method |
| abstract | (57) [Summary] [Object] The present invention relates to an epitaxial growth apparatus using a so-called non-uniformization reaction, and aims to improve the mass productivity and the uniformity of the film thickness and the film quality while coping with the increase in the diameter of the wafer. At the same time, energy saving, cost reduction, and improvement of safety are aimed at. A chamber 11 for forming a film, a source substrate holder 12 provided in the chamber 11, a first heating means provided in the source substrate holder 12, and a source substrate provided in the chamber 11. It has a growth substrate holder 13 facing the holder 12, a first moving means 14 for moving the growth substrate holder 13 up and down, and a gas introduction port 15 for introducing a reaction gas into the chamber 11. |
| priorityDate | 1994-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.