http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07307457-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-744 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-74 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
filingDate | 1994-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbc9b9ec59192e6dfa942d7ccea49cbc |
publicationDate | 1995-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H07307457-A |
titleOfInvention | Method for manufacturing semiconductor device |
abstract | (57) [Summary] [Purpose] After forming the p-base layer of a GTO thyristor, By making the surface of the p base layer a mirror surface by polishing, it is possible to perform microfabrication of one main surface of the GTO thyristor, increase the controllable current of the GTO thyristor, and reduce the on-voltage by removing deposits such as heavy metals. And other characteristics. Constitution: A p-type impurity is introduced from both sides or one side of an n-type silicon substrate (n base layer 1), and the one side into which the p-type impurity is introduced is polished to a mirror surface 6 And then n-type impurities are introduced. |
priorityDate | 1994-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 195.