| abstract |
(57) [Abstract] [Purpose] Easily create a mirror surface of a group III nitride semiconductor laser represented by Al x Ga Y In 1-XY N (including X = 0, Y = 0, X = Y = 0) To get. [Structure] Zinc oxide (Z nO) 2 and aluminum nitride (AlN) 8 on other parts Forming an intermediate layer consisting of a plurality of layers of group III nitride semiconductors (including Al x Ga Y In 1-XY N; X = 0, Y = 0, X = Y = 0) on the intermediate layer. Forming a semiconductor laser device layer composed of 3, 4, 5; Only the intermediate layer 2 of zinc oxide (ZnO) is removed by wet etching using a solution that etches only zinc oxide, and the sapphire substrate 1 and the bottom layer 3 of the semiconductor laser device layer are removed. A method for producing a Group 3 nitride semiconductor laser by forming a gap 20 between the first and second layers, cleaving the semiconductor laser element layer using the gap 20, and making the cleaved surface the mirror surface of the resonator of the laser. |