| abstract |
(57) [Abstract] [Purpose] To simultaneously suppress deterioration of junction leak resistance and increase of contact resistance, and facilitate formation of a barrier metal layer on the bottom surface of a contact hole having a narrow aperture and a high aspect ratio. [Structure] A contact hole 104a is formed, and a polycrystalline silicon film 105a is formed on the entire surface. ECR-PECV TiCl 4 and H 2 are introduced into the D device to generate ECR plasma, and the polycrystalline silicon film 105a is converted into a titanium silicide film 107a. In addition, N 2 is additionally introduced, A titanium nitride film 108a is formed. |