| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9d1e0e9b298df3fe44206a332afbb084
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N23-227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate |
1994-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba6a1acee600c27f47c427d6d34126d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a41aa7121ee551a51544b0ae2c59d2b6 |
| publicationDate |
1995-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H07283284-A |
| titleOfInvention |
Method of evaluating metal-oxide film-semiconductor device, that is, MOS device and Schottky device by measuring photoelectron spectrum when bias voltage is applied |
| abstract |
(57) [Summary] [Purpose] A highly reliable evaluation method. [Structure] A MOS device and a Schottky device are evaluated by measuring a photoelectron spectrum with a bias voltage applied. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008111800-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015014573-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104345256-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9607909-B2 |
| priorityDate |
1994-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |