http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07283215-A

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
filingDate 1994-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b81be1f2fcdc2383ae411b9fa70b6c3f
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publicationDate 1995-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H07283215-A
titleOfInvention Method for manufacturing optical integrated circuit
abstract (57) [Abstract] [Purpose] An optical integrated circuit is manufactured at a high yield, efficiency, and cost by simple mask alignment. [Structure] A first photoresist 306 is coated on the optical waveguide, and a microguide 201, a waveguide lens 202, The area where the optical demultiplexer 203, the phase shifter 204, and the two mirrors 205 and 206 are formed is exposed and removed. The upper cladding layer 103 of SiO 2 is etched and removed using the first resist film 306 left as a pattern as a mask. A second photoresist 30 is newly formed on the substrate. 7 is applied, and the microguide 201 and the waveguide lens 20 are applied. 2. The region 207 including the regions where the optical demultiplexer 203 and the phase shifter 204 are formed is left, and the other regions are exposed and removed. Using the second resist film 307 and the first resist film 306 left after patterning as a mask, S i 3 N 4 core layer 102 and SiO 2 lower cladding layer 101 Are removed by etching.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100441242-B1
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priorityDate 1994-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 24.