| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d9f3ca41550d315642580237250c5b0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-1603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-026 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-0632 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F2-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-063 |
| filingDate |
1995-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1eb57f0939c377c9c1ec1ea79f1f39b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36ca4a8cebaed6054563f9f21d628afc |
| publicationDate |
1995-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H07281218-A |
| titleOfInvention |
Optical waveguide epitaxially grown on semiconductor for upconversion |
| abstract |
(57) [Summary] [Objective] To provide an up-conversion waveguide epitaxially grown on a semiconductor. A multilayer structure including a single crystal semiconductor substrate is disclosed. There is an epitaxial buffer layer on the substrate, On top of the buffer layer is an epitaxial fluoride outer layer that exhibits upconversion excitation for red or infrared radiation. |
| priorityDate |
1994-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |