http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07273385-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R33-09 |
| filingDate | 1994-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f0d0433bd614213462ee952691d5dc0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a435dafe7858fe31e9df545a17eec123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0351be7348f45e91c12f92fe68de4813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53b2c9182e62e3423888d93c6959c8ca |
| publicationDate | 1995-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07273385-A |
| titleOfInvention | Magnetoresistive element and manufacturing method thereof |
| abstract | (57) [Summary] [Purpose] (Ni x Co 1-x ) y Fe 1-y (0.6 ≤ x ≤ 1. 0, 0.7 ≤ y ≤ 1.0) as a main component and a magnetic thin film layer with a thickness of 0.8 to 10 nm and a metal non-magnetic layer with a thickness of 0.5 to 5 nm and Cu as a main component are alternately laminated. Provided is a magnetoresistive effect element exhibiting a large magnetoresistive change in a low magnetic field by epitaxially growing the (111) planes of the crystals of the magnetic thin film layer and the metal nonmagnetic layer in the direction perpendicular to the film plane. [Structure] An Ag underlayer 2 is formed on a Si (111) substrate 1. The film thickness of the underlayer 2 must be at least 5 nm in order to epitaxially grow the magnetic thin film layer 3 and the metal nonmagnetic layer 4 on it (100). After forming the Ag underlayer, a flat surface is obtained by heat treatment at around 100 ° C. When measuring the ΔR / R by passing an electric current through the film surface, Ag If the underlayer 2 is thick, a current will flow there, There is a problem that ΔR / R decreases. So Ag The thickness of the underlayer is 100 nm or less, preferably 10 nm or less. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010033533-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6184680-B1 |
| priorityDate | 1994-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.