http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07273319-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_460c2d3884b7724541bf93de2a201dfd |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 1994-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0645ff3854dfa943d6f1d4d08922962f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d25204a4f9978d9cc857384497833632 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df74a66f12289fb73cea4e2f30880b2e |
| publicationDate | 1995-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07273319-A |
| titleOfInvention | Semiconductor device |
| abstract | (57) [Abstract] [Purpose] To suppress the increase in on-resistance due to the increase in resistance of the source layer [Configuration] The p-type base layer 16 is formed on the n − -type epitaxial layer 2, and the inside of the p-type base layer 16 is formed. Then, an n + type source layer 4 is formed. Then, a U groove 50 reaching the n − type epitaxial layer 2 from the surface is formed, and a gate oxide film 8 and a gate electrode 9 are formed on the U groove 50. At this time, the gate oxide film 8 is composed of a uniform thin film portion λ formed on the U-groove side and a thick film portion formed thicker than the thin film portion λ, and the gate electrode formed on the thin film portion λ. 9 is a U groove 50 From the bottom to the thin film portion λ and the thick film portion. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6163051-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110176401-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110176401-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000031484-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5998268-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001123623-A |
| priorityDate | 1994-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.