http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07273193-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6402b23ab8782152be47b3996e48a4a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate | 1994-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1263afe4ae4d368d3d5d888d5fc77abe |
| publicationDate | 1995-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07273193-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | (57) [Abstract] [PROBLEMS] To provide a semiconductor device and a manufacturing method thereof, which prevent moisture from permeating through an SGO film even when an SGO film for improving step coverage is used as an interlayer insulating film of a multilayer wiring. To do. A semiconductor device having an oxide / nitride film structure containing a nitrogen element in a plasma oxide film using organic silane. An example of the manufacturing method is TEOS and O 2 And a gas containing SiH 4 and a nitrogen element are simultaneously introduced to form a film by plasma excitation. |
| priorityDate | 1994-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.