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classificationIPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A62D101-04
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A62D3-176
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A62D3-38
filingDate 1994-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9495cae72f7607e086fdb5abe84ea61a
publicationDate 1995-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H07265460-A
titleOfInvention Low-temperature decomposition method for persistent halogenated organic compounds
abstract (57) [Summary] [Objective] To provide an efficient, simplified photochemical low-temperature decomposition method for persistent halogen-free organic compounds. [Structure] Methanol solution of persistent halogenated organic compounds such as PCBs and semiconductors (SiC, TiO 2 etc.) When 60% H 2 O 2 is slowly dropped while irradiating a low pressure ultraviolet light to the mixed solution of the iron and ferric salt aqueous solution, the mixed solution reaches 75 to 95 ° C. due to heat generation and the organic compound is radically decomposed. Electrons are excited by low-pressure ultraviolet light in the semiconductor immersed in the solution, and the excited electrons reduce Fe 3+ to Fe 2+ , which reacts with F 2+ and H 2 O 2 to generate a hydroxyl radical (.OH). Is generated, and the radical decomposes the organic compound. Further, the excited electrons act on dissolved oxygen to form superoxide (O 2 − ), and O 2 − is Fe. It is also considered that the decomposition reaction of the organic compound proceeds by acting on 3+ .
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006169146-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012133006-A1
priorityDate 1994-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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