http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07263816-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5198a2a21392d6cbc0bb4898b3fb3d29 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-363 |
| filingDate | 1994-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c59eb193a384ad8472e03c7f6981bf82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65bb10d41acb2cad906695cda28e0718 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29717211a80b664ae4dfe4e7f52b8eaa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c33bc672ebb3f887aaa04f66c388fe1 |
| publicationDate | 1995-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07263816-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | (57) [Summary] [Object] To provide a semiconductor device and a method for manufacturing the same that enable ohmic contact between a p-type layer made of a II-VI group compound semiconductor epitaxial crystal and an electrode. [Structure] Nitrogen is added at a concentration of 1 × 10 16 between a p-type layer made of a II-VI compound semiconductor epitaxial crystal and an electrode layer. cm −3 to 1 × 10 19 cm −3 , and carbon 1 × 10 By interposing a highly doped p-type ohmic layer containing 15 cm −3 to 1 × 10 19 cm −3, a large tunnel current can be expected due to carbon contained in the crystal within this range. An ohmic contact is obtained in between. Further, by forming the p-type ohmic layer with the same crystal as that of the p-type layer, the lattice matching can be established between the original p-type layer and the p-type ohmic layer, so that no crystal defect occurs. . From the above, a semiconductor device having good electrical characteristics and high reliability can be manufactured with high yield. |
| priorityDate | 1994-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.