http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07263797-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
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filingDate 1994-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c019917ac63b1daf8bb8f656ee409094
publicationDate 1995-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H07263797-A
titleOfInvention Semiconductor laser device
abstract (57) [Summary] [Object] The present invention improves productivity and versatility in an integrated semiconductor laser in which a plurality of grating-coupled surface-emitting DFB lasers having slightly different oscillation wavelengths are integrated in one chip. The most important feature is to be able to do so. [Structure] For example, on a p-InP substrate 11, p-In P buffer layer 12, InGaAsP active layer 13, InG The aAsP waveguide layers 14 are laminated in order, and four gratings 15 whose periods are slightly changed are radially arranged on the aAsP waveguide layers 14 with some of the gratings 15 being shared. In addition, the InGaAsP active layer 13 is mesa-etched in stripes along each grating 15 to form a buried structure. Thus, by collecting and integrating the output spots of a plurality of DFB lasers at one point, the four types of optical output from the output window 20 can be directly coupled to the optical fiber.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004013941-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021172393-A1
priorityDate 1994-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 23.