http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07258852-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3b0a3dbf8d6c9712d86ea1383fd5327 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18 |
| filingDate | 1994-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5aac5662889eb0c0d390e920399bb5d0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_670fbf340840ebaff8a02449b58cdbcb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d973e3d33b994124810fdd9d6b00b9cf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7c4e4231d125f3446eef4963f6209a0 |
| publicationDate | 1995-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07258852-A |
| titleOfInvention | Material and method for forming platinum film by metalorganic chemical vapor deposition |
| abstract | (57) [Abstract] [Purpose] MOCVD of high-purity platinum film at high deposition rate. It is formed by the method. [Structure] [(CH 3 ) 3 Pt (hfac) .H 2 O] which is an organoplatinum complex in which H 2 O or one molecule of pyridine is further coordinated to a hexafluoroacetylacetonatotrimethylplatinum (IV) complex or A platinum film is formed on the substrate by MOCVD using [(CH 3 ) 3 Pt (hfac) ยท Py]. [Effect] A high-purity film can be obtained at a high film-forming rate. When the film formation is performed in the presence of a small amount of CO gas, the film purity is further improved. |
| priorityDate | 1994-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.