| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7394
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7317 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 |
| filingDate |
1994-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e182217035ae1a5621721c168fba520c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb9f7fad898c831f6d34e428b7ee855c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a75e0cf8426f3e1c14fa2987a5e11c80 |
| publicationDate |
1995-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H07254609-A |
| titleOfInvention |
Semiconductor device |
| abstract |
(57) [Summary] [Object] To provide a power semiconductor device capable of preventing deterioration of characteristics even when a bipolar transistor is formed on an SOI substrate. [Structure] An n − type silicon 3 layer as an SOI layer having a thickness of 6 μm or less formed on a silicon substrate 1 via a silicon oxide film 2 and a base region formed in the n − type silicon 3 layer. 6 is surrounded by the emitter region 5, and the emitter region 5 is surrounded by the collector region 7. A bipolar transistor is provided, and the thickness of the n − -type silicon 3 layer as the collector layer below the base region 6 is 1 μm or more. Is characterized by. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005101581-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002319590-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005101134-A |
| priorityDate |
1994-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |