http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07254551-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03B27-32 |
filingDate | 1994-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd22e9563db0bf708a38ee139b01e23b |
publicationDate | 1995-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-H07254551-A |
titleOfInvention | Method for evaluating optical exposure apparatus and method for manufacturing semiconductor device |
abstract | (57) [Summary] [Object] An optical exposure apparatus evaluation method for adjusting, optimizing, and evaluating a focus mechanism, and an optical exposure apparatus used for forming a pattern on a semiconductor substrate. Regarding a method for manufacturing a semiconductor device having a pattern for evaluating an exposure apparatus, by accurately quantifying the focus accuracy when exposing a device pattern and extracting the problem of the focus mechanism of the exposure apparatus, the cause of the line width variation can be determined. Provided are a semiconductor device manufacturing method and an evaluation method capable of making a judgment. In an evaluation method of an optical exposure apparatus for evaluating a focus mechanism for aligning the height positions of an exposed surface and an image formation surface, a light source diaphragm is eccentric with respect to an optical axis of the optical exposure apparatus, and is substantially parallel to each other. Using a reticle having an evaluation pattern having more than one line pattern, the optical exposure apparatus exposes the evaluation pattern on the semiconductor substrate, and the dimension of the line pattern on the semiconductor substrate is measured to evaluate the focus mechanism. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7248349-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6967719-B2 |
priorityDate | 1994-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID453095146 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID161104 |
Total number of triples: 18.