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filingDate 1994-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1995-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H07240447-A
titleOfInvention Semiconductor wafer testing apparatus and method
abstract (57) [Summary] [Object] To obtain a high-speed semiconductor wafer testing apparatus and method. [Structure] This apparatus is a rapid thermal processing (RTP) irradiation source 20. One or more probe needles including a wafer support 17 capable of supporting a wafer mounted on (lamp, preferably halogen) and capable of contacting said wafer to perform electrical measurements. Including 22. The RTP irradiation source 20 arranged below the wafer support is excited to rapidly raise the temperature of the semiconductor wafer 16 mounted on the wafer support to a desired temperature. In this process, a predetermined electric test is carried out.
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priorityDate 1993-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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