http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07233485-A

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filingDate 1994-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1995-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H07233485-A
titleOfInvention Polishing liquid for copper-based metal and method for manufacturing semiconductor device
abstract (57) [Abstract] [Purpose] The copper or the copper alloy is hardly etched during the immersion of the copper or the copper alloy, and the copper or the copper alloy is melted during the polishing treatment so as to be between the immersion and the polishing treatment. The present invention is intended to provide a polishing liquid for copper-based metals, which shows an etching rate difference of several times to several tens of times. [Structure] It is characterized by containing at least one organic acid selected from aminoacetic acid and amidosulfuric acid, an oxidizing agent and water.
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