http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0722693-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 1993-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_535c2b2cb3bafef01a198d4688b4eae7 |
| publicationDate | 1995-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0722693-A |
| titleOfInvention | Semiconductor laser device and manufacturing method thereof |
| abstract | (57) [Summary] [Purpose] The active layer does not need to be a quantum well active layer. Further, it is possible to obtain a semiconductor laser device having a window structure and a method of manufacturing the same, in which characteristics are less deteriorated even when a multiple quantum well active layer is used. [Structure] A surface constituting a region other than the vicinity of the laser end face is a (100) just face 15, and a face constituting a region near the laser end face is [011] or [0/11] with respect to the (100) just face. tilt direction or during the direction plate surface 16 On the n-type GaAs substrate 1, which is an n-type AlGaAs lower cladding layer 2, an undoped AlGaAs active layer 3, and a p-type A 1 GaAs upper clad layer 4, p-type GaAs cap layer 5 Were sequentially grown to form a double hetero structure. |
| priorityDate | 1993-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 14.