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filingDate 1993-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e8d4a5e981029bf254db01742798b4e
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publicationDate 1995-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H0722573-A
titleOfInvention Integrated circuit and connection method thereof
abstract (57) [Summary] [Object] It is an object of the present invention to provide a via forming method in a single-layer or multi-layer plate, which achieves high density at high speed and does not excessively heat the substrate. In addition, it does not cause other quality and reliability problems during via formation, and achieves high wiring density between the electrical components in the package and between this component and the leads of the package in integrated circuit packages that include a multilayer substrate. It is to provide a via forming method that can be performed. A substrate comprising a conductive layer having a first surface and having a dielectric layer and a plurality of conductive vias provided in the substrate, and each conductive via is composed of a plurality of leads from a selected conductive portion of the conductive layer. A resin in which a plurality of conductive leads attached to the first surface of the substrate having conductive vias extending in one and the inside of the substrate and the leads are sealed, and the rest of the leads are left exposed to the outside of the resin. An integrated circuit consisting of an encapsulant.
priorityDate 1992-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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