http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0722320-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6402b23ab8782152be47b3996e48a4a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1993-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91214bc97d297d183c231807ec2223a3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2da947395ec889630de74803b71dfbfa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4618062037a93addb147dad6c2dc4ac |
| publicationDate | 1995-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H0722320-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Summary] [Objective] By treating the surface of the substrate with an organic compound to absorb the molecules of the organic compound and make the activity of the surface constant, the surface dependence of the substrate base is eliminated, and the deposition rate To improve the morphology of the substrate surface and improve its uniformity. When a semiconductor device is manufactured, in chemical vapor deposition of a metal, the surface of the substrate 1 is surface-treated with an organic compound or a solution thereof before the vapor phase growth to uniformly form a film, and to obtain a morphology. To reduce the fluctuation of. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021220696-A1 |
| priorityDate | 1993-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 67.