| abstract |
(57) [Summary] [Purpose] To impart a high rate of change in magnetoresistance. [Structure] Spin-dependent scattering of electrons that causes the magnetoresistive effect is basically caused by a current in a direction perpendicular to each main surface of a ferromagnetic thin film and a nonmagnetic thin film forming a stack of magnetoresistive elements. Because of the electron-scattering effect of, the direction of current flow is perpendicular to the main surface of the device stack, so that the magnetoresistance change is larger than when current flows in the film plane as in the conventional device. You can get a rate. |