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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
filingDate 1994-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_632cc3c5d4e951577acff17af1d17ae7
publicationDate 1995-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H07220999-A
titleOfInvention X-ray mask, manufacturing method thereof, and exposure method using the mask
abstract (57) [Summary] [Object] In manufacturing a T-type gate electrode, an X-ray mask suitable for using X-rays as exposure light in order to achieve miniaturization of the gate electrode, a manufacturing method thereof, and The purpose is to obtain an exposure method using a mask. [Structure] On a mask substrate 2 formed of SiC or the like, Ta (tantalum) or Au with high X-ray absorption coefficient The absorber 3 is made of metal such as (gold). Both ends of the absorber 3 have a thickness that completely blocks X-rays, The thickness t1 is, for example, 0.7 .mu.m. The central portion of the absorber 3 has a thickness that allows a part of X-rays to pass therethrough, and its thickness t2 is, for example, 0.2 .mu.m. [Effect] By irradiating X-rays through this X-ray mask, You can get different exposure depending on the place, A predetermined exposure pattern can be obtained by adjusting the exposure amount, and exposure with high resolution by X-ray can be performed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002139842-A
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priorityDate 1994-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 23.