http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07201975-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5198a2a21392d6cbc0bb4898b3fb3d29 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26533 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 1993-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5cfd901aaa3079b201266106542bc3d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a813ff11e9d2457cb2b6983e25b95bd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd7289145fc31e749a3fa2f7a003c706 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fd723c006d67d1bf48c8992c23d7b32 |
| publicationDate | 1995-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07201975-A |
| titleOfInvention | Semiconductor substrate manufacturing method and manufacturing apparatus |
| abstract | (57) [Summary] [Object] The present invention provides a continuous buried oxide film having a thickness of 90 nm or more and a single crystal silicon layer having a number of dislocations of less than 10 3 / cm 2 by implanting oxygen ions into a silicon substrate. A method of manufacturing a high-quality SOI semiconductor substrate made of [Structure] The average implantation depth and the implantation ion amount for each series of oxygen ion implantations are continuously or stepwise changed so that the oxygen atom concentration distribution has one maximum value in the depth direction, and a constant depth in-plane Then, it is made uniform, and the maximum value of the oxygen atom concentration is preferably 2.25 × 10 22 atoms / cm 3 or less and 1.0 ×. The amount is 10 22 atoms / cm 3 or more, and the total amount of oxygen ion implantation is obtained by multiplying the thickness of the buried oxide film by 4.48 × 10 22 and further 1300 for forming the buried oxide film. A high-quality SOI semiconductor substrate can be manufactured by performing heat treatment at a temperature of ℃ or more after the oxygen ion implantation is completed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010062503-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010118382-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007005563-A |
| priorityDate | 1993-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.