http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07201846-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 1993-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_009d418b262967d2f4c11fd71cf737b5 |
| publicationDate | 1995-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07201846-A |
| titleOfInvention | Method for interfacial oxidation of CVD oxide film |
| abstract | (57) [Summary] [Object] The present invention aims to improve the electrical quality of an oxide film by reducing interface states and traps. After the oxide film 12 is formed on the substrate 11 by the CVD method, the vicinity of the interface between the substrate 11 and the oxide film 12 is reoxidized in an oxidizing atmosphere containing at least nitric oxide gas so that the interface level becomes low. A reoxidation film 13 with few traps is formed. The nitric oxide gas used in this reoxidation treatment is composed of one or more kinds of a nitric oxide gas, a dinitrogen monoxide gas, a nitrogen dioxide gas, and a dinitrogen trioxide gas. The reoxidation treatment is performed at a temperature of 800 ° C. or higher and 1150 ° C. or lower. Further, the formation of an oxide film by the CVD method and the reoxidation treatment may be continuously performed in the same treatment chamber. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005244176-A |
| priorityDate | 1993-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.