http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H07193317-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 1993-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19ab67dff5ab20b95f020a82eef8efa6 |
| publicationDate | 1995-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H07193317-A |
| titleOfInvention | Method for manufacturing surface-emitting type semiconductor laser |
| abstract | (57) [Summary] [Object] To provide a highly reliable surface-emitting type semiconductor laser having a II-VI group buried layer with excellent characteristics and high yield. A vertical resonator is formed, and at least a part of a semiconductor layer forming the resonator is formed in a columnar shape. A mask is formed on the columnar semiconductor layer to form a II-circumference around the columnar semiconductor layer. In a method of manufacturing a surface-emitting type semiconductor laser having a step of burying with a Group VI compound semiconductor layer, a step of removing a semiconductor layer which is unnecessarily generated on a mask on a resonator by chemical mechanical polishing is adopted. |
| priorityDate | 1993-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.